Spin valve effect in ferromagnet-superconductor-ferromagnet single electron transistor a dissertation presented to the academic faculty by armando alonso anaya. Ian appelbaum curriculum vitae address physical sciences complex, university of maryland, college park phone (301) 337-7461 mail [email protected] hanson, and ac gossard, \luminescent spin-valve transistor, appl phys lett. We study interaction effects on transport through a small metallic cluster connected to two ferromagnetic leads (a single-electron spin-valve transistor) in. Preparation problem of the spin-valve transistor and metal base transistor structures in general, the deposition of a device quality semiconductor on top of a metal, has now been tackled by bonding of two semiconductor substrates during vacuum deposition of. A method and structure for a spin valve transistor (svt) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic. An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device item preview.
The spin-valve phototransistor is a semiconductor-ferromagnetic metal multilayer-semiconductor transistor operated by photoexciting hot electrons in the emitter semiconductor into a schottky collector this device uses an ultra-high vacuum-bonded float zone si/multilayer/n-inp structure to distinguish the emitter interband-excited component of. This design is called a bottom spin valve - the biased layer is now at the bottom this presents some growth problems as the biasing femn layer does not grow on top of a magnetically saturated film - so its magnetic structure is random. Journal of magnetism and magnetic materials 233 (2001) 274-279 temperature dependence of magnetocurrent in spin-valve transistor:a phenomenological study. Outline: outline introduction prerequisites to get into spintronics what is spintronics how spintronics got its birth present spintronics devices spin valve transistor datta das spin transistor spintronics vs. A spin valve is a device, consisting of two or more conducting magnetic materials, whose electrical resistance can change between two values depending on the relative alignment of the magnetisation in the layers. Spin transport in the magnetic tunneling transistorsspin transport in the magnetic tunneling transistors stuart parkin ibm almaden research center spin valve transistor (svt)spin valve transistor (svt) si emitter si collector spin-valve metal base nife co hot electrons e.
International journal of innovative research in advanced engineering (ijirae) issn:2349-2163 volume 1 issue 12 operation of spin valve transistors is explained, a brief details of its construction and working are presented, and. In spin valve transistor (svt) electrons are injected in to metallic base across a schottky barrier (emitter side) pass through the spin valve and reach the opposite side (collector side) of transistor.
The invention of the transistor represents a major milestone in electronics and science in general as an outgrowth of world war ii-era technology, transistors largely replaced. Spin-hall field effect transistors spin-orbit coupling interaction 3 electrical non-local spin valve detection by fm and by ishe electrical injection of a diffusive spin current from fm into a non-magnetic semiconductors high-resitive semiconducor. Spin valve transistor introduction: two experiments in 1920¶s suggested spin as an additional property of the electron one was the closely spaced splitting of hydrogen spectra lines, called fine structure.
Calculations of hot electron magnetotransport in a spin-valve transistor at ﬁnite temperatures jisang hong max-planck-institut fur mikrostrukphysik, weinberg 2, d-06120 halle, germany received 8 october 2001 received in revised form 9 november 2001. A second advantage of a spin transistor is that the spin of an electron is semi-permanent and can be used as means of creating cost-effective non-volatile solid state storage that does 2 perpendicular hot electron spin-valve effect in a new magnetic field sensor: the spin-valve transistor.
Tunnel based spin injection devices for semiconductor spintronics a dissertation the magnetic tunnel transistor the mtt are discussed two types of mtts, with ferromagnetic single and spin-valve base layers. Volume 74, number 26 physical review letters 26june 1995 perpendicular hot electron spin-valve effect in a new magnetic field sensor: the spin-valve transistor dj monsma,1 jc lodder,1 thja popma,1 and b dieny2 1mesa research institute, university of twente, 7500ae enschede, the netherlands 2cea/département de recherche fondamentale sur. Temperature dependent transport in spin valve transistor structures 161 applied magnetic field of h=440e at lok or h=350e at 300k, however, the ballistic collector current is considerably quenched. This new magnetoresistance called giant magnetoresistance, was discovered in 1988 in magnetic multilayers it was soon called the spin valve effect because the magnetic layers act as valves for electrons with different spin moments (spin up and spin down. 1 phys rev lett 1995 jun 2674(26):5260-5263 perpendicular hot electron spin-valve effect in a new magnetic field sensor: the spin-valve transistor. In a world of ubiquitous presence of electrons can you imagine any other field displacing it it may seem peculiar, even absurd, but with the advent of spintronics it is turning into reality in our c.